• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    COMPOSITE HARD MASK ARCHITECTURE AND METHOD TO CREATE NON-UNIFORM CURRENT PATH FOR TONQUE-SPIN-ACTIVATED MAGNETIC TUNNEL JOINT. A magnetic tunnel junction storage element (MTJ) and MTJ formation method are described. The magnetic tunnel junction storage element (MTJ) includes a fixed layer, a barrier layer, a free layer and a composite hardmask or upper electrode. The composite hard mask / upper electrode architecture is configured to provide a non-uniform current path through the MTJ storage element and is formed from electrodes having different resistance characteristics coupled in parallel. An optional adjustment layer interposed between the free layer and the upper electrode helps to reduce the constant damping of the free layer.
    公开号:BR112012017265B1
    申请号:R112012017265-4
    申请日:2011-01-14
    公开日:2020-10-13
    发明作者:Wei-Chuan Chen；Seung H. Kang；Xiaochun Zhu
    申请人:Qualcomm Incorporated；
    IPC主号:
    专利说明:

    Field of the Invention
    [0001] The described modalities refer to a hardmask architecture composed in a Magnetic Tunnel Junction (MTJ) storage element and methods to create non-uniform current paths for Torque-Spin MTJs. Description of the Prior Art
    [0002] Magneto-Resistive Random Access Memory (MRAM) is a non-volatile memory technology that uses magnetic elements. For example, Magneto-Resistive Spin Transfer Torque Random Access Memory (STT-MRAM) uses electrons that become spin-polarized as electrons pass through a thin film (spin filter). STT-MRAM is also known as Spin Transfer Torque RAM (STT-RAM), Spin Transfer Torque Magnetization RAM (Spin-RAM), and Spin Movement Transfer (SMT-RAM).
    [0003] Figure 1 illustrates a conventional STT-MRAM bit cell 100. The STT-MRAM bit cell 100 includes magnetic tunnel junction (MTJ) storage element 105, a transistor 101, a bit line 102 and a word line 103. The MTJ storage element is formed, for example, of at least two ferromagnetic layers (a fixed layer and a free layer), each of which may contain a magnetic field or polarization, separated by an insulating layer thin non-magnetic (tunneling barrier). Electrons from the two ferromagnetic layers can penetrate through the tunneling barrier due to a tunneling effect under a polarizing voltage applied to the ferromagnetic layers.0 tunneling of polarized spin electrons through the free layer can transfer their angular movements or torque to the elements of the free layer, thus affecting the magnetic polarization of the free layer.
    [0004] The magnetic polarization of the free layer can be reversed so that the polarity of the fixed layer and the free layer are either substantially aligned (in parallel), or opposite (anti-parallel). The resistance of the electrical path through the MTJ will vary depending on the alignment of the polarizations of the fixed and free layers. This variation in resistance can be used to program and read bit cell 100. Bit cell STT-MRAM 100 also includes a source line 104, a detection amplifier 108, read / write circuit 106 and a line reference bit bit 107.
    [0005] For example, bit cell 100 can be programmed in such a way that a binary value "1" is associated with an operational state in which the polarity of the free layer is parallel to the polarity of the fixed layer. Correspondingly, a binary value "0" can be associated with an anti-parallel orientation between the two ferromagnetic layers. A binary value can thus be written to the bit cell by changing the polarization of the free layer. A sufficient current density (typically measured in Amperes / centimeter2) generated by electrons flowing through the tunneling barrier is necessary to change the polarization of the free shell. The current density required to change the polarization of the free layer is also called the switching current density. The decrease in the switching current density value leads to a beneficial reduction in the energy consumption of MTJ cells. In addition, a lower switching current density allows for smaller device dimensions and a correspondingly higher density of MTJ cells on an STT-MRAM integrated circuit.
    [0006] The switching current density is dependent on the ability of electrons flowing through the tunneling barrier to efficiently transfer its spin torque to the magnetic elements of the free layer. Introducing a non-uniformity in the electrical current path created by the electron flow can advantageously lead to a more efficient transfer of the spin torque, thus leading to a more efficient switching behavior and a lower switching current density. However, conventional MTJ architectures promote a uniform current path through the MTJ bit cell. Therefore, there is a need for architectures that can promote a non-uniform current path through the MTJ bit cells. Summary of the Invention
    [0007] Exemplary modalities of the invention are directed to devices related to a Magnetic Tunnel Junction (MTJ) and to a Spin Transfer Torque Magneto-resistive Random Access Memory cell (STT-MRAM) and the methods of forming it . More particularly, modalities are related to a hardmask architecture composed in a storage element of a Magnetic Tunnel Junction (MTJ) of an STT-MRAM cell and methods to create non-uniform current paths for Spin Torque powered by MTJs.
    [0008] For example, an exemplary embodiment includes an MTJ storage element, the MTJ storage element comprises a fixed layer, a barrier layer and a free layer; and an upper electrode formed at the top of the free layer, where the upper electrode is configured to provide a non-uniform current path through the MTJ storage element. In an exemplary embodiment, an adjustment layer is optionally sandwiched between the free layer and the upper electrode.
    [0009] Another exemplary embodiment is directed to a method of forming an MTJ storage element, the method comprising forming an MTJ, comprising a fixed layer, a barrier layer and a free layer; forming an internal upper electrode in the free layer; standardize the upper internal electrode using lithography and engraving, and form an upper external electrode in the upper internal electrode, encapsulate the upper internal electrode; record the upper external electrode; and recording MTJ using the upper outer electrode and the upper inner electrode as a mask.
    [0010] Another exemplary embodiment is directed to a magnetic tunnel junction storage element (MTJ) comprising: a lower conductive mechanism for electrically coupling the MTJ storage element, a first magnetic mechanism to contain a first polarization, a first insulating mechanism for facilitate the flow of tunneling current and a second magnetic mechanism to contain a second polarization, in which the second polarization is reversible; damping mechanisms to reduce the constant damping of the second magnetic mechanism formed on top of the second magnetic mechanism; internal upper conductor mechanism for electrically coupling the MTJ storage element, the internal upper conductor mechanism being adjacent to the damping mechanism, and external upper conductor mechanism for electrically coupling the MTJ storage element, the external upper conductor mechanism positioned outside the first conductive mechanism upper and electrically parallel to the internal upper conductive mechanism.
    [0011] Another exemplary modality is directed to a method of forming a magnetic tunnel junction storage element (MTJ), the method comprising: step of forming an MTJ, comprising a fixed layer, a barrier layer and a free layer ; step of forming an internal upper electrode on the free layer; step of standardizing the upper internal electrode using lithography and engraving, and step of forming an upper external electrode in the upper internal electrode, encapsulating the upper internal electrode; step of recording the upper external electrode, and step of recording the MTJ using the upper external electrode and the upper internal electrode as a mask. Brief Description of the Figures
    [0012] The attached drawings are presented to assist in the description of the modalities of the invention and are provided only for illustration of the modalities and not for limiting them.
    [0013] Figure 1 - is an illustration of an arrangement of conventional Spin Transfer Torque Magnetic Resistive Memory (STT-MRAM) cells.
    [0014] Figure 2 - is a cross-sectional view of a conventional MTJ bit cell.
    [0015] Figure 3 - is a cross-sectional view of an exemplary MTJ bit cell with a composite upper electrode architecture and an optional adjustment layer.
    [0016] Figure 4 - shows cross-section and projection views of sections of an exemplary MTJ bit cell according to Figure 3. Figure 4 illustrates the magnitude of the current flow through different sections of the upper composite electrode. Figure 4 also illustrates switching activity within the free layer of the MTJ bit cell according to an exemplary embodiment.
    [0017] Figure 5 - provides information similar to Figure 4 for an exemplary MTJ bit cell with a different architecture than the composite upper electrode.
    [0018] Figure 6 and Figure 7 - are schematic cross-sectional views of an MTJ bit cell during the various stages of manufacture.
    [0019] Figure 8 - provides an exemplary flow chart for the formation of a memory device having a magnetic tunnel junction storage element (MTJ). Detailed Description of the Invention
    [0020] Aspects of the invention are described in the following description and related drawings directed to the specific modalities of the invention. Alternative modalities can be designed without departing from the scope of the invention. In addition, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant data of the invention.
    [0021] The word "exemplary" is used here to mean "serving as an example, circumstance, or illustration". Any modality described here as "exemplary" is not necessarily interpreted as preferred or advantageous over other modalities. Likewise, the term "modalities of the invention" does not require that all modalities of the invention include the feature discussed, the advantage or the mode of operation. The terminology used here is for the purpose of describing only particular modalities and is not intended to limit the modalities of the invention.
    [0022] As used herein, the singular forms "one", "one" and "o / a" are intended to include the plural as well, unless the context clearly indicates otherwise. It will also be understood that the terms "comprises", "comprising", "includes" and / or "including", when used here, specify the presence of indicated characteristics, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other characteristics, integers, steps, operations, elements, components and / or groups thereof.
    [0023] The described modalities recognize that a non-uniform current path through the MTJ bit cell can advantageously lead to a lower switching current density. This recognition derives from the fact that they are concentrated in a high number of spin polarized electrons in a region located within the free layer leading to a greater "switching activity" in the localized region. Here, the change in activity refers to the process in which the polarized spin electrons transfer their spin torque to polarize the magnetic elements of the free ferromagnetic layer. The higher switching activity within the localized region transfers impulse to surrounding regions within the free shell, which are thus activated to alternate under the influence of fewer spin polarized electrons. Correspondingly, a high-density confined current path provided to a localized region of the free layer promotes efficient switching activity in the free layer.
    [0024] Figure 2 shows a cross-sectional view of a conventional MTJ architecture with a uniform current flow through the MTJ bit cell. It is well known in the art that the direction of the current is denoted as opposed to the direction of the flow of electrons. A uniform current flow is illustrated in Figure 2 from the metal layer or bit line 102 towards the free layer 214, through the upper electrode or hard mask layer 216. The free layer 214 can include a single layer, or it can be formed from a multilayer pile. Figure 2 also illustrates the lower electrode 202 on which the MTJ bit cell is formed, an antiferromagnetic layer 204, a fixed layer comprising a lower fixed layer 206, a spacer layer 208 and an upper fixed layer 210 and the barrier of 212 tunneling. Layer 218 interleaving dielectric assists in isolating MTJ bit cells.
    [0025] An exemplary modality that incorporates improvements over the conventional MTJ architecture in accordance with the teachings described here is illustrated in Figure 3. As illustrated in Figure 3, the upper electrode of the MTJ 300 cell may include a low resistance 304 electrode and a high resistance electrode 306. The low resistance electrode 304 can form a surrounding region around the high resistance electrode 306, as shown in Figure 3. An optional adjustment layer 302 can also be formed on the free layer 214 for protect the free layer 214 from defects related to the process, and to optimize the properties of the free layer 214. An adjustment layer 302 formed of a material with constant dampening can help the switching activity of the free layer 214. As suggested in Figure 3, the adjustment layer 302 can be formed in such a way that it is in contact with the low resistance electrode 304, the high resistance electrode 306 and the free layer 214 in an exemplary embodiment. Alternatively, the adjustment layer 302 can be formed in such a way that it is only in contact with only the high-strength electrode 306 and the free layer 214. The remaining layers can include conventional arrangements and materials as described above in relation to the Figure 2 and will not be described later here. The steps of the process for the manufacture of the exemplary modalities will be provided in the next sections of this description.
    [0026] Figures 4A-4C illustrate cross-sectional views and three dimensional projection views (top view) of relevant sections of an exemplary MTJ cell. The low resistance electrode 304 forms a concentric shell or layer that surrounds the high resistance electrode 306. As previously described, an anti-parallel alignment between the free layer 214 and the fixed layer 210 can represent a binary value "0" stored in the MTJ bit cell 300. Figure 4A illustrates the polarization of the entire free layer 214 as anti-parallel to the polarization of the fixed top layer 210. For the purposes of this illustration, Figure 4A represents the initial conditions to say, the time "t0", when word line 103 is deactivated and a binary value "0" is stored in the MTJ bit cell 300.
    [0027] Correspondingly, Figure 4B illustrates the operation of cell MTJ 300 at time "tl" when word line 103 is activated, bit line 102 is in high activity and word line 103 is in low activity. At time tl, the MTJ bit cell 300 is therefore "selected" and an operation to write a binary value "1" is initiated. The flow of spin polarized electrons from the lower electrode to the free layer, in other words, current flows from the line of bit 102 through the low resistance electrode 304 and a high resistance electrode 306, through the adjustment layer option 302 in relation to the free layer 214. Since electrodes 304 and 306 appear in parallel with the current flow, there is a greater magnitude of the current flowing through the low resistance path 304, than in the high resistance path 306 .
    [0028] In Figure 4A, the section of the free layer that describes the current of the high current density / low resistance path 304 is labeled 304a, and the section of the free layer that describes the current from the low current density path / high resistance 306 is labeled 306a. The high current density causes the magnetic elements in 304a to alternate in time tl (as illustrated in Figure 4B, which shows that the polarization of the magnetic elements in 304a is reversed). This inversion transfers the torque from the polarized spin electrons at 304a to the magnetic elements at 306a. Subsequently at a time "t2" (> tl), the polarization of the magnetic elements at 306a is reversed under the coupling interaction 304a and the lower density current flowing to 306a from the high resistance path 306. Figure 4C illustrates the entire free layer 214 with its polarity reversed by the two process steps described above. A binary value "1" is said to be written to the bit cell of MTJ 300 at time t2.
    [0029] One skilled in the art will appreciate that the multi-step switching process with a non-uniform current flow through the MTJ bit cell, as described above, leads to more efficient switching activity in the free layer, than a conventional single-step switching process with uniform current flow. A multistage switching process involving a combination of a confined high density current path (304) and a low density current path (306), uses the movement generated by the first switching activity step to a later step of switching activity. A single step switching process does not take advantage of the movement generated from the switching activity within the free layer 214 to beneficially improve the efficiency of the switching activity.
    [0030] Figure 5A illustrates an exemplary embodiment in which the low resistance electrode 502 forms the inner section of the composite electrode structure, and the high resistance electrode 504 forms an outer surrounding region. Similar to the embodiment of Figures 4A-C, a high current / low resistance path 502 provides current to an internal region labeled 502a in the free layer 214, and a low current density / high resistance path 504 provides current to a region. outer labeled 504a in the free layer 214. Magnetic elements in the inner region 502a are caused to switch first due to the high current density. In addition, by providing a movement for the magnetic elements at 504a, the high current flowing through the current path 502 also leads to the creation of an Oersted field 506 on the outer periphery of region 502a, as shown in Figure 5B. The magnetic field created by the effect of the Oersted field also helps the switching of magnetic elements in the region of low current density 504a. Figure 5C illustrates the entire free layer 214 with its polarity reversed by the two process steps described above.
    [0031] Although the effects of the Oersted field are present in the exemplary modalities of both Figures 4A-C and Figures 5A-C, the effects are more pronounced in the embodiment illustrated in Figures 5A-C due to the high current density path through of the internal electrode 502.
    [0032] Methods for the manufacture of exemplary MTJ bit cell modalities with benefits of composite hard mask architectures are described below. Figure 6 illustrates the process flow for the manufacture of exemplary modalities illustrated in Figures 4A-C with an internal high resistance electrode 306 and an external high resistance electrode 304. An MTJ comprising a lower electrode 202, an AFM layer 204, fixed layers 206, 208 and 210, barrier layer 212 and free layer 214 are formed using conventional techniques. An adjustment layer 302 is optionally formed on top of the free layer 214, as shown in Figure 6A. The role of the adjustment layer 302, as previously described, is to protect the free layer 214 from damage related to the process and also to reduce the constant damping of the free layer. The lower damping constant results in a reduction in switching current density. The adjustment layer can be formed of a metal such as Ru, Mg, Hf, Pt, Ir, Al, Zr, V, Cu, Au, Ag, PtMn or a low strength compound, such as thin-MgO. The free layer 214 can be a single layer formed of a ferromagnetic material, or it can include a multilayer stack, as is well known in the art.
    [0033] A high strength electrode 306 is formed on top of the optional adjustment layer 302 (or directly on top of the free layer 214 if no adjustment layer is present). The high strength electrode 306 can be formed from a dielectric material such as TaOx or TiOx, or a high strength compound. A photo-resistant material 602 is formed on top of the 306 high-resistance electrode. The device is then subjected to a recording process, such as CF4 engraving for the 306 high-resistance electrode pattern. Then, the photo-resistant material 602 is removed using a process that may involve the incineration of oxygen, as shown in Figure 6B. Adjustment layer 302, if present, protects the free layer 214 from damage during oxygen recording and incineration.
    [0034] Then, the adjustment layer 302, if present, can be etched using a corrosion process, such as CH3OH corrosion, as shown in Figure 6C. If no adjustment layer is present, the process proceeds to the next step, which involves the deposition of a low resistance 304 electrode, as shown in Figure 6D. The low resistance electrode 304 can be formed from a metal such as Ta or Ti, or a low resistance compound, such as TaNx or TiNx.
    [0035] Next, the MTJ 600 battery is subjected to a corrosion process, such as CF4 corrosion, for the low resistance electrode pattern, as shown in Figure 7A. The adjustment layer 302, if present, can also be recorded at this stage. Alternatively, the adjustment layer 302, if present, cannot be etched, and can thus continue to form a protective layer over the entire upper part of the free layer 214, as shown in Figure 7A. Then, the MTJ 600 stack is modeled downward to the lower electrode 202, using a corrosion process such as CH3OH corrosion, CO / NH3 corrosion, or chlorine gas based corrosion, as shown in Figure 7B. Then, a dielectric layer is deposited as shown in Figure 7C. The dielectric layer is then planarized and etched back and a metal layer is deposited using a metallization process. The layer of metal or line of bits 102 is in contact with the low resistance electrode 304 and the high resistance electrode 306, as shown in Figure 7D.
    [0036] Although the process steps described above refer to the formation of an MTJ bit cell according to the modalities shown in Figures 4A-C, one skilled in the art will recognize that the modalities represented in Figures 5A-C, with a external high resistance electrode 504 and internal low resistance electrode 502, can be manufactured using similar process steps, with minor modifications. In particular, a low resistance electrode 504 can be deposited instead of the high resistance electrode 306 in the step illustrated in Figure 6A. Likewise, a high-strength electrode 502 can be deposited instead of a layer of low-strength electrode 304 in the step illustrated in Figure 6D. The remaining process steps can remain substantially the same.
    [0037] Figure 8 is a flow chart illustrating an exemplary method for forming a memory device having a magnetic tunnel junction storage element (MTJ). An MTJ comprising a fixed layer, a barrier layer and a free layer can be formed in 802. In 804, an optional adjustment layer can be formed over the free layer. An upper inner electrode is formed over the free layer or optional adjustment layer in 806. The upper inner electrode is modeled using lithography and engraving in 808. An upper outer electrode is formed over the inner upper electrode, encapsulating the inner upper electrode in 810 The upper outer electrode is engraved in 812. The MTJ stack is engraved using the upper outer electrode and the upper inner electrode as a mask in 814. It will be appreciated that the flowchart is not intended to limit the various modalities and was provided merely for help in illustrating and discussing the detailed steps.
    [0038] According to the exemplary methods, an MTJ storage element can be manufactured with a composite upper electrode structure as described herein. Exemplary embodiments beneficially promote a non-uniform current path through the MTJ bit cell, which leads to improved switching behavior and a lower switching current density.
    [0039] It will be appreciated that the memory devices, including the MTJ storage elements described herein, can be included within a mobile phone, a portable computer, a portable personal communication system (PCS) unit, portable data units, such as personal data assistants (PDAs), enabled GPS devices, navigation devices, decoders, music players, video players, entertainment units, fixed location data units, such as units of meter reading equipment, or any other device that stores and retrieves computer data or instructions, or any combination thereof. Accordingly, the modalities can be suitably employed in any device that includes an active integrated circuit including memory having MTJ storage elements, as described herein.
    [0040] The previous described devices and methods can be designed and can be configured in GDSII and GERBER computer files, stored in a computer-readable medium. These files are in turn provided to factory operators who manufacture devices based on these files. The resulting products are semiconductor chips, which are then cut into semiconductor chips and packaged on a semiconductor chip. The chips are then used in the devices described above.
    [0041] Thus, the modalities can include machine-readable or computer-readable medium incorporating instructions that, when executed by a processor, transform the processor and any other cooperation elements in a machine to perform the functions described here, as provided by the instructions .
    [0042] While the previous description shows illustrative modalities, it should be noted that various changes and modifications can be made here without departing from the scope of the invention as defined by the appended claims. The functions, steps and / or actions of the method claims, according to the modalities described here, need not be performed in any particular order. In addition, although the elements of the modalities can be described or claimed in the singular, the plural is contemplated unless a limitation to the singular is explicitly indicated.
    权利要求:
    Claims (6)
    [0001]
    1. Method for forming a magnetic tunnel junction storage element, MTJ, the method comprising: forming (802) an MTJ, comprising a fixed layer, a barrier layer and a free layer; the method is CHARACTERIZED because it also comprises: forming (806) an internal upper electrode in the free layer; standardize (808) the upper internal electrode using lithography and engraving; forming (810) an upper external electrode in the upper internal electrode, encapsulating the upper internal electrode; record (812) the upper external electrode; and recording (814) the MTJ using the upper outer electrode and the upper inner electrode as a mask.
    [0002]
    2. Method, according to claim 1, CHARACTERIZED by the fact that the upper internal electrode is formed from one among Ta, Ti, TaNx, TiNx and the upper external electrode is formed from one among TaOx, TiOx.
    [0003]
    3. Method, according to claim 1, CHARACTERIZED by the fact that the upper internal electrode is formed from one among TaOx, TiOx and the upper external electrode is formed from one among Ta, Ti, TaNx, TiNx.
    [0004]
    4. Method, according to claim 1, CHARACTERIZED by the fact that it also comprises: forming an adjustment layer in the free layer, in which the adjustment layer is interposed between the free layer and the inner upper electrode.
    [0005]
    5. Method, according to claim 4, CHARACTERIZED by the fact that the upper internal electrode is formed from one among Ta, Ti, TaNx, TiNx and the upper external electrode is formed from one among TaOx, TiOx.
    [0006]
    6. Method, according to claim 4, CHARACTERIZED by the fact that the upper internal electrode is formed from one among TaOx, TiOx and the upper external electrode is formed from one among Ta, Ti, TaNx, TiNx.
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    法律状态:
    2019-01-08| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
    2019-09-17| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|
    2020-05-19| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|
    2020-10-13| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 14/01/2011, OBSERVADAS AS CONDICOES LEGAIS. |
    优先权:
    申请号 | 申请日 | 专利标题
    US12/687,426|2010-01-14|
    US12/687,426|US8513749B2|2010-01-14|2010-01-14|Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction|
    PCT/US2011/021376|WO2011088375A2|2010-01-14|2011-01-14|Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction|
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